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inchange semiconductor product specification silicon pnp power transistors BD242/a/b/c description ? ? with to-220c package ? complement to type bd241/a/b/c applications ? for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD242 -55 BD242a -70 BD242b -90 v cbo collector-base voltage BD242c open emitter -115 v BD242 -45 BD242a -60 BD242b -80 v ceo collector-emitter voltage BD242c open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i cm collector current-peak -5 a i b base current -1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors BD242/a/b/c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD242 -45 BD242a -60 BD242b -80 v ceo(sus) collector-emitter sustaining voltage BD242c i c =30ma; i b =0 -100 v v cesat collector-emitter saturation voltage i c =-3a;i b =-0.6 a -1.2 v v be base-emitter on voltage i c =-3a ; v ce =-4v -1.8 v BD242/a v ce =-30v; i b =0 i ceo collector cut-off current BD242b/c v ce =-60v; i b =0 -0.3 ma BD242 v ce =-45v; v be =0 BD242a v ce =-60v; v be =0 BD242b v ce =-80v; v be =0 i ces collector cut-off current BD242c v ce =-100v; v be =0 -0.2 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1 ma h fe-1 dc current gain i c =-1a ; v ce =-4v 25 h fe-2 dc current gain i c =-3a ; v ce =-4v 10
inchange semiconductor product specification 3 silicon pnp power transistors BD242/a/b/c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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